High Efficiency Class-F MMIC Power Amplifiers at Ku-Band
نویسنده
چکیده
Two high efficiency Ku-band pHEMT power amplifier MMICs are presented in this paper. A single stage, high efficiency amplifier provides a peak power added efficiency of 57.6% with 10.5 dB associated gain and 26.5 dBm output power into a 50Ω load at 14 GHz. Additionally, a dual stage, high gain amplifier provides a peak power added efficiency of 50.4% with 19.7 dB associated gain and 27.5 dBm output power into a 50Ω load at 14.3 GHz. State-of-the-art efficiency performance at these frequencies is achieved through Class-F transistor operation. Process selection, circuit design, and measured results are described.
منابع مشابه
MMIC class-F power amplifiers using field-plated GaN HEMTs
Abstract: Class-F microwave monolithic integrated circuit (MMIC) power amplifiers (PA) fabricated in a GaN technology are reported. Field-plated GaN HEMT devices are used for highpower performance. Two MMICs are reported. The first class-F MMIC PA operating at 2.0GHz achieved a power-added efficiency (PAE) of 50% with 38dBm output power and 6.2W/mm power density. A second class-F PA operating a...
متن کاملDesign of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT
In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...
متن کاملNon-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application
A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...
متن کاملBroad-Band High-Power Amplifier Using Spatial Power-Combining Technique
High power, broad bandwidth, high linearity, and low noise are among the most important features in amplifier design. The broad-band spatial power-combining technique addresses all these issues by combining the output power of a large quantity of microwave monolithic integrated circuit (MMIC) amplifiers in a broad-band coaxial waveguide environment, while maintaining good linearity and improvin...
متن کامل40-W CW Broad-Band Spatial Power Combiner Using Dense Finline Arrays
This paper presents a broad-band spatial powercombining system based on tapered-slot antenna arrays integrated in a standard WR-90 waveguide environment. The system is designed using a modular tray architecture, providing full waveguide-band frequency coverage and an excellent thermal environment for a set of monolithic-microwave integrated-circuit (MMIC) amplifiers. The shape of the tapered-sl...
متن کامل